650 V, 12 A N-channel MOSFET in I2PAKFP — what you need to know
The STMicroelectronics STFI15NM65N is an N-channel power MOSFET built on the MDmesh™ II technology, a multi-drain mesh layout that reduces on-resistance while keeping the 650 V drain-source breakdown. The full-pack package isolates the back metal, so no insulating pad is needed between the tab and the heatsink — a time-saver on the assembly line, but the thermal path is through the plastic, so the 30 W ceiling is real and not conservative.
The STFI15NM65N is listed as Obsolete. ST has moved on from this MDmesh II generation. For existing BOMs, source through surplus or last-time-buy channels.
Gate charge and switching — the 33.3 nC number
Gate charge is 33.3 nC at 10 V. Input capacitance is 983 pF at 50 V.
The through-hole full-pack package isolates the tab electrically.
