600 V, 13 A N-channel SuperMESH MOSFET — now obsolete
The STFI13NK60Z: On-resistance is 550 mOhm maximum at 10 V gate drive with 4.5 A drain current; total gate charge is 92 nC at 10 V. The device is packaged in a through-hole TO-262-3 Full Pack (I²Pak) with an isolated tab.
For sustainment of existing designs, this part must be sourced through the independent distribution channel — new-old-stock or surplus inventory. Any BOM line carrying this MPN should be reviewed for a form-fit-function replacement.
Package and thermal: TO-262-3 Full Pack
Maximum power dissipation is 35 W at case temperature, which sets the thermal design limit. The isolated tab simplifies assembly in systems where the heatsink is at chassis ground potential, but the package's higher thermal resistance compared to a standard TO-220 means the heatsink must be sized accordingly to keep junction temperature below 150°C at full load.