950 V N-channel MOSFET — SuperMESH3™ generation
The STMicroelectronics STFI13N95K3 is a 950 V, 10 A N-channel power MOSFET built on the SuperMESH3™ technology platform. It targets high-voltage switched-mode power supplies, PFC stages, and offline converters where a through-hole, isolated full-pack package simplifies assembly.
Full-pack I2PAK — no insulating hardware needed
The TO-262-3 Full Pack (I2PAKFP, TO-281) isolates the back of the package electrically, so no mica washer or insulating pad is required between the device and the heatsink. This cuts assembly time and parts count in a production BOM. The through-hole mounting suits point-to-point wiring and prototyping, though the tab's thermal path runs through the resin — expect higher junction-to-case thermal resistance than a standard TO-220.
Obsolete — sourcing through surplus distribution
No direct-replacement order code appears in the lifecycle record. For a BOM line already qualified to this footprint and voltage class, the available stock sits in independent distribution and surplus channels. The STP13N95K3 shares the same base product number and die but comes in a different package (TO-220); verify pinout and thermal compatibility before substituting. Any new design should select an active 950 V MOSFET with a comparable gate charge and on-resistance profile.
Gate charge and capacitance — switching-loss budget
These numbers set the drive requirement and switching loss estimate for a hard-switched converter. The 10 V drive voltage for rated Rds(on) means a standard 12 V gate-drive rail is sufficient; a logic-level 5 V drive will not achieve the specified on-resistance.
Temperature range — military-grade junction
Power dissipation is rated at 40 W at case temperature. The full-pack package limits heat extraction compared to a metal-tab variant, so the thermal design should budget for the higher junction-to-case gradient.