650 V N-channel in a TO-262 full-pack — what you get
The STFI13N65M2 comes in a through-hole TO-262-3 Full Pack (I²Pak) package. Rds(on) is 430 mOhm maximum at 5 A, 10 V; gate charge is 17 nC at 10 V.
The STFI13N65M2 is listed as Obsolete. No last-time-buy window or official successor is recorded in the available lifecycle data. Any new design should select a current-production 650 V N-channel MOSFET from the MDmesh M2 or M5 family with a similar TO-262 full-pack footprint; parametric fit depends on the specific Rds(on) and gate charge targets of the application.
430 mOhm Rds(on) and 650 V — the switching-stage trade-off
At full rated current, conduction loss (I²R) comes to about 43 W, exceeding the 25 W package dissipation limit — so the 10 A rating is a die capability, not a continuous-current limit in a real heatsinked design. Derating is required; the part is better suited for pulse-current or transient loads, or for lower average currents where the Rds(on) is acceptable. The 17 nC gate charge keeps driver losses low, and the 590 pF input capacitance means the gate driver doesn't need to supply high peak currents for fast switching. The 650 V breakdown gives headroom for 400 V bus applications (power factor correction, flyback converters) with margin for ringing.