STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, 600 V Vdss, 11 A continuous drain, 380 mOhm Rds(on) at 10 V, TO-262-3 Full Pack I²Pak through-hole package, -55°C to 150°C operating temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Full Pack, I²Pak |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 580 pF @ 100 V |
The ±25 V maximum gate-source rating gives good margin for ringing on the gate node.
The STFI13N60M2 comes in a TO-262-3 Full Pack (I²Pak) through-hole package, also designated I2PAKFP (TO-281). The through-hole leads suit wave-soldering and manual rework. Maximum power dissipation is 25 W at case temperature, so a heatsink with good thermal interface is expected for continuous operation above a few amps.
The maximum on-resistance is 380 mOhm at 5.5 A drain current and 10 V gate drive.
It belongs to ST's MDmesh™ II Plus series of N-channel power MOSFETs.