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STMicroelectronics STFI130N10F3 — Discrete Semiconductors

STFI130N10F3 STMicroelectronics N-Channel MOSFET

MPNSTFI130N10F3
Obsolete

STMicroelectronics STFI130N10F3, STripFET™ III N-Channel MOSFET, 100V Vdss, 46A Id, 9.6mOhm Rds(on) at 10V, 57nC Qg, TO-262-3 Full Pack I²Pak (I2PAKFP), Through Hole, -55°C to 175°C.

$4.6800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI130N10F3 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C46A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9.6mOhm @ 23A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3305 pF @ 25 V

Product details

The STFI130N10F3 is listed as obsolete. The STripFET III family has been superseded by later generations (STripFET F7, MDmesh), but none carries a guaranteed pin-to-pin replacement in the I2PAKFP full-pack package. If you need a drop-in fit, the replacement search should start with the same package code (I2PAKFP / TO-281) and the same 100V / 46A class from ST's current portfolio.

100V, 46A, 9.6 mOhm — sizing the part for the rail

The 100V rating gives comfortable margin on a 48V bus or a 12V/24V rail with inductive load transients — you are not living at the edge of the SOA. The 46A Id figure is the package-and-die thermal limit at Tc=25°C; real-world current in a 70°C ambient, through a heatsink, will be lower, but the headline number tells you this die is sized for a 30A–40A continuous load with adequate heatsinking. The on-resistance is 9.6 mOhm maximum at 23A with 10V gate drive. That is the number to use for conduction-loss calculations at full load. At 23A, the dissipation is roughly 5W (I²R) before switching losses — within the 35W package power limit, but the junction temperature rise from that alone is significant. The 57 nC gate charge at 10V is modest for a 46A device, so the gate driver does not need to be oversized; a standard 1A–2A driver handles the switching edges cleanly. Input capacitance is 3305 pF at 25V Vds. That is a moderate figure — the Miller plateau will be visible but not problematic with a properly laid-out gate loop. Keep the gate-driver return path short and the gate resistor sized for the desired turn-on speed.

TO-262 full-pack I2PAKFP — the package that saves an insulator

The STFI130N10F3 comes in a TO-262-3 Full Pack, also called I²Pak or I2PAKFP (ST's designation TO-281). That saves assembly time and improves thermal transfer. The trade-off is slightly higher thermal resistance compared to a standard TO-220 with an insulator, but for a 35W dissipation ceiling it is adequate with a modest heatsink. The gate threshold is 4V maximum at 250µA drain current. That is a standard threshold for a 10V-driven device — do not expect it to turn on hard with 5V logic.

That is the full industrial-plus grade — suitable for engine-bay electronics, industrial motor drives running hot, and outdoor telecom equipment where ambient can hit 85°C and the junction climbs from self-heating. The 175°C Tj max is the same rating as automotive-grade MOSFETs, though this part does not carry an AEC-Q101 line item in the record.

Frequently asked questions

Is STFI130N10F3 obsolete?

Yes, the product status is listed as Obsolete. The last-time-buy window has passed. For new designs, look at current STripFET generation parts in the I2PAKFP package. For existing BOM lines, the independent surplus channel is the supply route.

What is the replacement for STFI130N10F3?

The replacement search should target a 100V N-channel MOSFET in the I2PAKFP (TO-281) full-pack package with similar Rds(on) and current rating from ST's current portfolio. Without a confirmed pin-to-pin alternate, you will need to compare package drawings and parametric tables before committing the BOM.

What is the Rds(on) of STFI130N10F3?

The maximum on-resistance is 9.6 mOhm at 23A drain current with 10V gate drive. That is the figure to use for worst-case conduction loss calculations.

What is the Vgs threshold of STFI130N10F3?

The maximum gate threshold voltage is 4V at 250µA drain current. This is a standard-level threshold for a 10V-driven MOSFET — it will not turn on fully with 5V logic.