STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, 650 V drain-to-source, 7 A continuous drain at 25°C, 670 mOhm Rds(on) at 3.5 A / 10 V, through-hole TO-262-3 Full Pack (I²Pak), 25 W power dissipation, 12.5 nC gate charge.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Full Pack, I²Pak |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 670mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 410 pF @ 100 V |
The STMicroelectronics STFI11N65M2 is an N-channel power MOSFET built on the MDmesh™ II Plus technology.
Total gate charge is 12.5 nC at 10 V, and input capacitance measures 410 pF at 100 V drain bias.
The TO-262-3 Full Pack (I²Pak) isolates the mounting tab electrically. Maximum power dissipation is 25 W at case temperature, and the junction temperature limit is 150 °C.
No official successor order code has been published by STMicroelectronics. For a drop-in replacement with the same TO-262-3 Full Pack footprint, a cross-reference search against the MDmesh II Plus family would be needed; parts such as the STF11N65M2 (TO-220FP) or STP11N65M2 (TO-220) share the same die but differ in package, so they are not pin-compatible.