600 V, 10 A SuperMESH MOSFET — now obsolete
The STFI10NK60Z: The 750 mOhm maximum on-resistance at 4.5 A with 10 V gate drive defines the conduction loss for a given load. The 70 nC gate charge figure helps estimate switching losses and drive requirements in a typical offline flyback or PFC stage.
No last-time-buy date or official successor is recorded in the available lifecycle documentation. Date-code provenance matters here: verify the stock against the manufacturer's last production window.
The 600 V drain-source rating provides the 80 % derating margin typical for universal-input offline converters (up to 400 V bulk). The 10 A continuous current rating is the package limit at case temperature 25 °C — real-world derating applies above that, and the 35 W maximum power dissipation in the TO-262 full pack is the thermal ceiling. The 750 mOhm Rds(on) at 10 V gate drive means the conduction loss at 4.5 A drain current is roughly 15 W (I²R), which consumes nearly half the package dissipation budget — a heatsink is mandatory, and the isolated tab simplifies mounting. The 70 nC total gate charge at 10 V is moderate; a typical gate driver with 1 A source/sink capability switches this device in the tens of nanoseconds range, but the input capacitance of 1370 pF at 25 V drain-source should be considered for the drive loop layout.
Through-hole I2PAKFP — assembly and thermal notes
The three through-hole leads fit a standard TO-262 footprint.