Skip to main content
Log in
STMicroelectronics STFI10N65K3 — Discrete Semiconductors

STFI10N65K3 N-Channel MOSFET, 650 V, 10 A, SuperMESH3

MPNSTFI10N65K3
Obsolete

STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, Through Hole, TO-262-3 Full Pack, I²Pak, 650 V drain-source, 10 A continuous drain at 25°C, 1 Ohm Rds(on) at 10 V, ±30 Vgs max, 42 nC gate charge.

$2.8600Ref. price · indicative, final on quote
STMicroelectronics STFI10N65K3 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI10N65K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1Ohm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1180 pF @ 25 V

Product details

650 V N-channel MOSFET for offline power conversion

The STMicroelectronics STFI10N65K3 is a 650 V N-channel power MOSFET from the SuperMESH3™ series, built with a metal-oxide semiconductor structure. The 42 nC typical gate charge keeps switching losses manageable in hard-switched topologies like flyback and PFC stages.

Obsolete — plan for a replacement

For new designs or production fills, buyers should evaluate pin-compatible alternatives within the SuperMESH3 family or other 650 V N-channel MOSFETs in the I2PAKFP footprint.

The 650 V drain-source voltage rating provides adequate margin for universal-input offline converters (up to 400 V DC bus) and allows derating for transient spikes common in flyback and LLC topologies. The 1 Ohm Rds(on) at 10 V gate drive sets conduction losses at roughly 10 W at 3.6 A, so a heatsink is mandatory. The 42 nC gate charge is moderate for a 650 V device, meaning the gate driver sees a reasonable switching loss at frequencies up to 100 kHz.

Frequently asked questions

What is the replacement for STFI10N65K3?

Buyers should look for a pin-compatible 650 V N-channel MOSFET in the I2PAKFP (TO-262 Full Pack) package from ST's SuperMESH3 family or other vendors. The key parameters to match are the 650 V Vdss, 10 A Id, and 1 Ohm Rds(on) at 10 V gate drive.