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STMicroelectronics STFI10N62K3 — Discrete Semiconductors

STFI10N62K3 N-Channel MOSFET, 620 V, 8.4 A, SuperMESH3

MPNSTFI10N62K3
Obsolete

STMicroelectronics SuperMESH3™ N-Channel MOSFET, STFI10N62K3, 620 Vdss, 8.4 A continuous drain, 750 mOhm Rds(on) at 10 V, TO-262-3 Full Pack (I2PAKFP) through-hole, -55°C to 150°C junction.

$2.1800Ref. price · indicative, final on quote
STMicroelectronics STFI10N62K3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI10N62K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.4A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I2PAK
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs750mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 50 V

Product details

620 V N-channel in a through-hole full-pack package

Maximum on-resistance is 750 mOhm at Vgs = 10 V and Id = 4 A, with a gate charge of 42 nC at 10 V — the gate drive requirement is modest, but the Rds(on) is on the higher side for a 620 V class, so conduction losses need to be checked against the thermal budget.

No official successor or replacement part number is listed by the manufacturer.

Thermal and switching profile

Input capacitance (Ciss) is 1250 pF at Vds = 50 V, and the maximum gate threshold voltage is 4.5 V at 100 µA drain current.

Frequently asked questions

Where can I buy STFI10N62K3?

The STFI10N62K3 is obsolete and no longer in production.

Is STFI10N62K3 obsolete?

Yes, STMicroelectronics lists the STFI10N62K3 as obsolete. No official successor or replacement has been announced.

What is the replacement for STFI10N62K3?

STMicroelectronics has not published a direct replacement for the STFI10N62K3. For a BOM fix, source the original part through independent channels; for a new design, evaluate a current-production 620 V N-channel MOSFET in a through-hole full-pack package with similar Rds(on) and gate charge.