STFH24N60M2

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh N-Channel MOSFET, 600V Vdss, 18A continuous drain, 190 mOhm Rds(on) at 10V gate drive, 29 nC gate charge, TO-220FP full-pack through-hole package, -55 to 150°C junction temperature.

STMicroelectronics STFH24N60M2
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[IN STOCK] In Stock: 50 pcs
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Technical specifications

STFH24N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 100 V

Technical details

600 V MDmesh N-channel — offline power switch

The STFH24N60M2 is a 600 V N-channel MDmesh MOSFET from STMicroelectronics in a TO-220 full-pack (TO-220FP) through-hole package.

Conduction loss and gate drive budget

Total gate charge is 29 nC at 10 V. Input capacitance Ciss is 1060 pF typical at 100 V drain-source. The 35 W power dissipation ceiling in the TO-220FP package sets the usable switching frequency.

Temperature grade and application envelope

The TO-220FP full-pack construction isolates the back tab electrically, so the device can be bolted directly to a grounded heatsink without a sil-pad, saving assembly time and thermal resistance. This matters in motor-drive and PFC stages where multiple devices share a common heatsink.

Sourcing and compliance status

It is ROHS3 compliant, with no halogen or lead restrictions blocking new designs.

STFH24N60M2
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