STFH18N60M2

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh N-Channel MOSFET, STFH18N60M2, 600 V Vdss, 13 A Id, 280 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through hole.

STMicroelectronics STFH18N60M2
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Technical specifications

STFH18N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs21.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds791 pF @ 100 V

Technical details

Total gate charge is 21.5 nC at 10 V, which is modest for a 600 V, 13 A device. A typical gate driver sourcing 1 A can switch the gate in about 22 ns, keeping crossover losses manageable in a 100 kHz SMPS. The input capacitance is 791 pF at 100 V drain bias, so the driver sees a capacitive load that rises at lower Vds — account for that in the gate resistor selection to avoid ringing.

Temperature range and package — design-in checklist

The through-hole mounting suits point-to-point wiring on a perfboard or a PCB with drilled holes; the 0.50 mm pitch of the leads is standard for a TO-220 footprint.

Lifecycle and supply — active, no LTB risk

It is ROHS3 compliant.

STFH18N60M2
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