STFH13N60M2

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh™ series, MOSFET N-Channel 600 V, 11 A (Tc), TO-220-3 Full Pack, Through Hole, 380mOhm @ 5.5A, 10V, 17 nC gate charge.

STMicroelectronics STFH13N60M2
[IN STOCK] In Stock: 4 pcs
$5.00/ pc

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Technical specifications

STFH13N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds580 pF @ 100 V

Technical details

It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package, which gives full isolation from the heatsink tab — no separate insulator needed on the mounting screw. The 380 mOhm typical on-resistance at 5.5 A and 10 V gate drive keeps conduction losses manageable in a 25 W dissipation envelope. With a gate charge of 17 nC at 10 V, it switches fast enough for hard-switched power supplies and lighting ballasts without demanding a monster gate driver.

Active production, no end-of-life worry

For new designs, this part is safe to specify without a near-term requalification risk.

STFH13N60M2
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