STF8N90K5

STMicroelectronics

STMicroelectronics MDmesh™ K5 series STF8N90K5, N-Channel MOSFET, 900 V drain-source, 8 A continuous drain current at 25°C, 130 W power dissipation, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STF8N90K5
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[IN STOCK] In Stock: 1,195 pcs
$3.23/ pc

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Technical specifications

STF8N90K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA

Technical details

The STF8N90K5: The 900 V drain-to-source rating gives you a solid derating margin for universal-input offline designs that see transient spikes up to 800 V or more. That saves assembly time and improves thermal transfer in a crowded chassis.

Temperature range and gate threshold — the bench reality

Maximum gate threshold voltage is 5 V at 100 µA drain current. 10 V gate drive needed for lowest Rds(on). ±30 V maximum gate-source rating.

Active lifecycle. 900 V drain-source. 8 A continuous drain current.

STF8N90K5
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