STF8N80K5

STMicroelectronics · SuperMESH5™ Series

STMicroelectronics STF8N80K5, SuperMESH5™ N-channel MOSFET, 800 V Vdss, 6 A continuous drain, 950 mOhm Rds(on) at 10 V, TO-220 Full Pack through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STF8N80K5
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[IN STOCK] In Stock: 14 pcs
$2.23/ pc

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Technical specifications

STF8N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs16.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Technical details

Typical applications target offline switched-mode power supplies, PFC stages, and flyback converters where the 800 V breakdown gives headroom for universal AC input (85–265 VAC) with reflected voltage spikes.

The 16.5 nC total gate charge (at 10 V) keeps switching losses manageable in hard-switched topologies — a 100 kHz flyback driving this gate from a 10 V supply draws roughly 16.5 mA average from the driver, well within a standard MOSFET driver's capability. Input capacitance is 450 pF typical at 100 V drain-source bias. That low Ciss means the gate driver does not need to push much current during the Miller plateau, which helps keep turn-on and turn-off edges clean without excessive ringing.

Active production, ROHS3, and sourcing posture

No official second-source cross-reference is listed in the ST portfolio for this exact order code.

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