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STMicroelectronics STF7N80K5 — Discrete Semiconductors

STF7N80K5 N-Channel MOSFET, 800V 6A TO-220FP, SuperMESH5

MPNSTF7N80K5
Active

STMicroelectronics STF7N80K5 SuperMESH5™ N-Channel MOSFET, 800 Vdss, 6 A continuous drain, TO-220-3 Full Pack (TO-220FP), 1.2 Ohm Rds(on) at 10 V drive, 13.4 nC gate charge, -55 to 150 °C junction.

$2.4600Ref. price · indicative, final on quote
STMicroelectronics STF7N80K5 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF7N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.2Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds360 pF @ 100 V

Product details

800 V switching in a thermally isolated through-hole package

The STF7N80K5: The TO-220FP (full-pack) through-hole package electrically isolates the backside tab — no insulating pad or washer is needed between the device and the heatsink, which simplifies assembly and improves thermal coupling in grounded-heatsink designs. The junction temperature range spans -55°C to 150°C, covering industrial and automotive under-hood thermal environments.

Gate charge and input capacitance — driver loading for the switching frequency

At 100 kHz the average gate-drive current is 1.34 mA; at 500 kHz it rises to 6.7 mA. Gate threshold voltage is 5 V maximum at 100 µA drain current.

Active lifecycle and compliance documentation

The part is ROHS3 compliant, covering the EU RoHS exemption list without conflict.

Frequently asked questions

Will STF7N80K5 drop into a board designed for STF7N65M2 without rewiring?

No — the STF7N65M2 is a 650 V device in the MDmesh™ series with a 1.15 Ohm Rds(on) at 2.5 A and a 4 V gate threshold. The STF7N80K5 is an 800 V device with a 5 V gate threshold. Both share the TO-220FP footprint, but the gate-drive voltage and the higher drain rating mean the gate-drive circuit and the voltage stress margin differ. A direct drop-in without verifying the gate-drive rail and the maximum drain voltage in the application is not recommended.