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STMicroelectronics STF7N65M6 — Discrete Semiconductors

STF7N65M6 N-Channel MOSFET, 650 V, 5 A, TO-220FP

MPNSTF7N65M6
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STMicroelectronics STF7N65M6, N-Channel MOSFET, MDmesh™ M6 series, 650 V Vdss, 5 A continuous drain, 990 mOhm Rds(on) at 10 V, 6.9 nC gate charge, TO-220-3 Full Pack, -55 to 150 °C.

$0.8439Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF7N65M6 specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.75V @ 250µA
Rds on (Max) @ id, vgs990mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs6.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds220 pF @ 100 V

Product details

650 V, 5 A N-channel in a fully isolated TO-220FP

The STMicroelectronics STF7N65M6 is a 650 V, 5 A N-channel power MOSFET built on the MDmesh™ M6 technology platform. It is aimed at high-voltage switching applications such as flyback converters, offline power supplies, and LED lighting drivers where the fully isolated TO-220FP package simplifies heatsinking and eliminates the need for an insulating pad.

The 6.9 nC typical gate charge keeps switching losses low, making this part suitable for frequencies up to the low hundreds of kilohertz in resonant or quasi-resonant topologies.

Temperature range and package thermal limits

Maximum power dissipation is 20 W at the case, limited by the TO-220FP's full-mold construction — the package itself is the insulator, so derating must follow the case temperature curve, not ambient.

Frequently asked questions

What is the Vgs(th) of the STF7N65M6?

Maximum gate threshold voltage is 3.75 V at 250 µA drain current.