STF7N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, 600 V Drain-Source Voltage, 5 A Continuous Drain Current, TO-220-3 Full Pack Through Hole, Tube.

STMicroelectronics STF7N60M2
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Technical specifications

STF7N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs950mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs8.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds271 pF @ 100 V

Technical details

600 V, 5 A N-channel MOSFET in TO-220FP — MDmesh™ II Plus

It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package, which provides full isolation from the heatsink — no insulating washer needed. The 950 mOhm maximum on-resistance at 2.5 A and 10 V gate drive, combined with an 8.8 nC typical gate charge, makes this part suited for resonant and hard-switching topologies in offline power supplies, adapters, and lighting ballasts where efficiency and thermal management are priorities.

The MDmesh™ II Plus series includes several voltage and current grades; if a different Rds(on) or current rating is needed, the series shares the same TO-220FP footprint.

STF7N60M2
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