600 V, 6 A N-channel — MDmesh DM2 for offline power
The STF7N60DM2 is an N-channel 600 V, 6 A power MOSFET from STMicroelectronics' MDmesh DM2 series, housed in a TO-220FP full-pack through-hole package.
900 mOhm Rds(on) and 7.5 nC gate charge — switching loss budget
At 3 A and 10 V Vgs, Rds(on) is 900 mOhm. The 25 W power dissipation limit at the case temperature sets the thermal budget. Total gate charge is 7.5 nC at 10 V Vgs. A low Qg like this keeps gate-drive losses small and allows the MOSFET to switch efficiently at frequencies above 100 kHz in flyback or PFC stages. Input capacitance Ciss is 324 pF at 100 V drain-source, which together with the low Qg means the driver sees a light capacitive load — a benefit for tight-layout designs where ringing on the gate trace is a concern.
TO-220FP full-pack — isolation without a pad
The TO-220FP (TO-220 full-pack) package encapsulates the die in a fully molded body with no exposed metal tab. This gives inherent isolation between the drain and the heatsink, so the device can be mounted directly to a grounded chassis or shared heatsink without an insulating pad. The trade-off is higher thermal resistance compared to a standard TO-220 with a pad — the 25 W power dissipation limit reflects that. Gate-source voltage is rated ±25 V maximum, giving margin against ringing on the gate node.