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STMicroelectronics STF7N52K3 — Discrete Semiconductors

STF7N52K3 N-Channel MOSFET, 525 V, 6 A, TO-220FP, Obsolete

MPNSTF7N52K3
Obsolete

STMicroelectronics SuperMESH3™ N-Channel MOSFET, STF7N52K3, 525 Vdss, 6 A continuous drain, 850 mOhm Rds(on) at 3 A, 10 V, TO-220FP through-hole package, 150°C junction temperature.

$1.7500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF7N52K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage525 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs850mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 100 V

Product details

525 V N-channel in a TO-220FP — what it does

The STF7N52K3: The fully isolated TO-220FP package eliminates the need for a mounting pad or insulator — the tab is electrically isolated, so the screw-down point can share a heatsink with other devices without a separate isolation washer.

Gate charge and switching — 33 nC at 10 V

Total gate charge is 33 nC at a 10 V drive. The input capacitance is 870 pF at 100 V drain-source.

The STF7N52K3 is listed as obsolete.

Thermal budget — 25 W in a TO-220FP

Maximum power dissipation is 25 W at case temperature, but the TO-220FP has a higher thermal resistance than the standard TO-220 because the plastic encapsulation adds a thermal barrier between the die and the heatsink. In practice, for continuous operation at 6 A, the conduction loss alone (I² × Rds(on) at temperature) will eat a large fraction of that 25 W budget — expect to derate the current significantly unless the case is held near 25°C with forced cooling. The 150°C maximum junction temperature is the hard limit; the Rds(on) roughly doubles from 25°C to 150°C, so the thermal loop needs to be calculated at the hot junction, not the 25°C datasheet number.

Frequently asked questions

Can STF7N52K3 be used in a 500 V application?

Yes. The drain-source breakdown voltage is 525 V, providing 25 V of headroom above a 500 V rail. This is adequate for a 500 V DC bus in a power supply, but the derating margin depends on the switching overshoot — keep the peak drain voltage below 525 V.