STF7N105K5

STMicroelectronics

STMicroelectronics SuperMESH5™ N-Channel MOSFET, STF7N105K5, 1050 V Vdss, 4 A Id, 2 Ohm Rds(on) at 10 V, TO-220-3 Full Pack through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STF7N105K5
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Technical specifications

STF7N105K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1050 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds380 pF @ 100 V

Technical details

The STF7N105K5: The 1050 V Vdss rating suits offline flyback converters, PFC stages, and auxiliary power supplies running from rectified mains. The TO-220FP full-pack package isolates the tab from the heatsink, simplifying assembly in metal enclosures. That 2 Ohm figure at 10 Vgs is the number to use for conduction loss calculations in a hard-switched converter.

Gate-drive voltage and threshold — a checklist for the first prototype

The STF7N105K5 specifies a 10 V gate drive for the rated on-resistance, with a maximum gate-source voltage of ±30 V. The gate threshold voltage is 5 V maximum at 100 µA drain current. Input capacitance is 380 pF at 100 V Vds. Through-hole mounting in the TO-220-3 Full Pack package means the leads are designed for soldering into a PCB or wiring into a terminal block. The full-pack construction isolates the mounting hole from the drain, so no mica washer or sil-pad is needed when bolting to a chassis or heatsink — just thermal grease. That saves a BOM line and a manual assembly step.

The base product number STF7 covers the family, and the K5 suffix denotes the 1050 V variant.

STF7N105K5
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