STMicroelectronics STF6N90K5, MDmesh™ K5 series, N-channel MOSFET, 900 V Vdss, 6 A Id, 1.1 Ohm Rds(on) at 3 A, TO-220FP through-hole package, -55°C to 150°C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.1Ohm @ 3A, 10V |
At 6 A the conduction loss is I²R — 6 A squared times 1.1 Ohm gives nearly 40 W, which exceeds the 25 W package dissipation limit. That means the 6 A rating is only usable with a substantial heatsink and at case temperatures well below 25°C; the practical continuous current in a typical TO-220FP layout is lower, governed by the junction-to-case thermal impedance and the ambient temperature.
Datasheet provides all electrical characteristics, pinout, and thermal data needed for design validation.
Sourcing buyers need immediate procurement options to fill BOM lines.
Stock availability directly affects lead time and production schedules.
Brokers and maintenance techs need lifecycle status to plan replacements or end-of-life buys.
Design engineers verify PCB footprint and gate/drain/source connections.
Cross-references or alternatives are needed for second-source or replacement when original is unavailable.