STMicroelectronics · MDmesh™ K5 Series
STMicroelectronics STF6N90K5, MDmesh™ K5 series, N-channel MOSFET, 900 V Vdss, 6 A Id, 1.1 Ohm Rds(on) at 3 A, TO-220FP through-hole package, -55°C to 150°C operating junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.1Ohm @ 3A, 10V |
At 6 A the conduction loss is I²R — 6 A squared times 1.1 Ohm gives nearly 40 W, which exceeds the 25 W package dissipation limit. That means the 6 A rating is only usable with a substantial heatsink and at case temperatures well below 25°C; the practical continuous current in a typical TO-220FP layout is lower, governed by the junction-to-case thermal impedance and the ambient temperature.
