STF6N80K5

STMicroelectronics · SuperMESH5™ Series

STMicroelectronics SuperMESH5™ STF6N80K5, N-Channel MOSFET, 800V Vdss, 4.5A Id, 1.6Ohm Rds(on) @ 2A, 10V, 13nC Qg, TO-220FP through-hole, -55°C to 150°C.

STMicroelectronics STF6N80K5
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Technical specifications

STF6N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.6Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds270 pF @ 100 V

Technical details

800 V N-channel in a full-pack through-hole

Maximum on-resistance is 1.6 Ohm at 2 A drain current with 10 V gate drive. At 4.5 A the conduction loss hits about 32 W at 25°C junction — but the TO-220FP package is rated for 25 W total dissipation, so you need to stay below the full current in a real thermal environment. Gate charge is 13 nC at 10 V, which keeps the drive current modest even at switching frequencies above 100 kHz. A typical gate driver delivering 1 A peak can charge the gate in about 13 ns, though the practical switching speed is limited by the miller plateau and the 270 pF input capacitance at 100 V drain bias.

STF6N80K5
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