STF6N65K3

STMicroelectronics · SuperMESH3™ Series

STMicroelectronics SuperMESH3™ STF6N65K3, N-Channel MOSFET, 650V Vdss, 5.4A Id, 1.3 Ohm Rds(on), 35 nC Qg, TO-220FP, Through Hole, 150°C Tj.

STMicroelectronics STF6N65K3
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[IN STOCK] In Stock: 108 pcs
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Technical specifications

STF6N65K3 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.4A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.3Ohm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 50 V

Technical details

STF6N65K3
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