STF42N65M5

STMicroelectronics

STMicroelectronics MDmesh V N-Channel MOSFET, 650 V drain-source, 33 A continuous drain, 79 mOhm Rds(on) at 10 V gate drive, 100 nC gate charge, TO-220FP full-pack through-hole package, active production.

STMicroelectronics STF42N65M5
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[IN STOCK] In Stock: 18 pcs
$11.73/ pc

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Technical specifications

STF42N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs79mOhm @ 16.5A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4650 pF @ 100 V

Technical details

STMicroelectronics lists the STF42N65M5 as Active.

Package and thermal considerations

The TO-220FP (full-pack) package is a through-hole, fully isolated tab — no mica washer or silicone pad between the device and the heatsink. The maximum junction temperature is 150°C, and the case-limited power dissipation is 40 W. For continuous operation near the 33 A rating, a heatsink with adequate thermal interface is required; the full-pack's junction-to-case thermal resistance is higher than a standard TO-220, so derate accordingly. The ±25 V maximum gate-source voltage is typical for this class; a 10 V gate drive is specified for the rated Rds(on).

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