STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, 600 V drain-source, 34 A continuous drain current, 88 mOhm Rds(on) at 10 V, 57 nC gate charge, TO-220 Full Pack through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 34A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 88mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 57 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2500 pF @ 100 V |
STF40N60M2 total gate charge is 57 nC at 10 V.
The TO-220 Full Pack (TO-220FP) package provides full isolation between the mounting tab and the die — no separate insulating washer or pad is required when bolting to a heatsink.
STMicroelectronics lists the STF40N60M2 with an active product status.
The maximum on-resistance is 88 mOhm at Vgs = 10 V and Id = 17 A. This is the guaranteed ceiling at 25 °C junction temperature; actual Rds(on) will be lower at lower current and will increase with junction temperature per the normalized curve in the datasheet.
Yes, the package is TO-220-3 Full Pack, also designated TO-220FP. The full-plastic body provides electrical isolation between the mounting tab and the die, eliminating the need for a separate insulating pad.
The part is manufactured with lead-free plating and is RoHS-compliant per ST's standard environmental compliance. No separate lead-free certification is listed, but the MDmesh II Plus series is generally produced with lead-free terminations.