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STMicroelectronics STF3N80K5 — Discrete Semiconductors

STF3N80K5 N-Channel MOSFET, 800 V, 2.5 A, TO-220FP

MPNSTF3N80K5
Active

STMicroelectronics SuperMESH5™ STF3N80K5, N-Channel MOSFET, 800 V Vdss, 2.5 A Id, 3.5 Ohm Rds(on) at 10 V, 9.5 nC Qg, TO-220 Full Pack, -55 to 150 °C.

$1.7900Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF3N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds130 pF @ 100 V

Product details

800 V N-channel in a fully isolated through-hole package

That saves a BOM line and assembly step in through-hole power supplies.

At 2.5 A the conduction loss is I²R = 22 W — right at the 20 W power dissipation limit, so the thermal design needs a heatsink with good airflow or forced convection. Gate charge is 9.5 nC at 10 V; that's low enough that a simple PWM controller with a totem-pole driver can switch it cleanly at 65–100 kHz without excessive drive losses. Input capacitance is 130 pF at 100 V drain-source — a small number that keeps the switching node capacitance low in a flyback primary, reducing turn-on losses and ringing on the drain node.

Active production, ROHS3, and the full-pack advantage

The TO-220 Full Pack package is the same 3-pin through-hole footprint as a standard TO-220, but the exposed metal tab is at drain potential and fully isolated from the case — you can mount it with a single screw and a dab of thermal grease, no mica washer.

Where it fits — flyback primary, auxiliary supply, PFC boost

The 800 V rating and 2.5 A current make this a natural fit for the primary-side switch in off-line flyback converters up to about 30–40 W, auxiliary power supplies for industrial controls, and single-stage PFC boost stages where the voltage stress stays under 600 V. The full-pack isolation simplifies heatsinking in metal-enclosed equipment where the heatsink is grounded to the chassis.

Frequently asked questions

Is STF3N80K5 equivalent to STF3N80K4?

The STF3N80K5 is a later-generation SuperMESH5™ device. The K4 variant is from the same voltage/current class but uses an older die technology. Pin-compatible in the same TO-220FP footprint, but the K5 offers lower gate charge and improved switching performance. Check the specific Rds(on) and Qg values against your design targets before substituting.

Can I use STF3N80K5 in a flyback converter?

Yes, the 800 V drain-source rating and 2.5 A continuous current are well suited for the primary switch in off-line flyback converters up to about 30–40 W. The 9.5 nC gate charge keeps drive losses low at typical switching frequencies, and the full-pack package simplifies heatsinking.