STF35N60DM2

STMicroelectronics · MDmesh™ DM2 Series

STMicroelectronics MDmesh™ DM2 series N-Channel MOSFET, 600 V Vdss, 28 A continuous drain, 110 mOhm Rds(on) at 10 V, 54 nC gate charge, TO-220FP full-pack through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STF35N60DM2
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Technical specifications

STF35N60DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 100 V

Technical details

600 V MDmesh DM2 N-channel in TO-220FP

STF35N60DM2 is an N-channel 600 V 28 A MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package.

Conduction loss at the operating point

Temperature range and application environment

STF35N60DM2
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