STF33N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 26 A Id, 125 mOhm Rds(on) at 13 A, 10 V, 45.5 nC Qg, TO-220-3 Full Pack, -55°C to 150°C junction.

STMicroelectronics STF33N60M2
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Technical specifications

STF33N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs45.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1781 pF @ 100 V

Technical details

600 V N-channel with an isolated tab — the TO-220FP thermal budget

The STF33N60M2: The 35 W power dissipation ceiling at case temperature is the practical limit in a real enclosure, not the 26 A continuous drain rating.

This is the figure a power supply engineer uses to size the heatsink for a given output power.

45.5 nC gate charge — driver current at the target switching frequency

For a 100 kHz hard-switching converter, the average gate-drive current is 4.55 mA, but the peak current required to charge the gate in the Miller plateau is higher — typically 1–2 A peak for fast turn-on.

Active production, isolated package — no LTB tracking, no insulating washer

It is ROHS3 compliant, covering the full restricted-substance list without exemptions. The TO-220 Full Pack package saves one assembly step (no insulating washer or thermal grease on the tab), but the thermal resistance is higher than the standard TO-220; the 35 W dissipation limit must be respected in the thermal design.

STF33N60M2
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