STF31N65M5

STMicroelectronics · MDmesh™ V Series

STMicroelectronics STF31N65M5, MDmesh™ V series, N-Channel MOSFET, 650 V Vdss, 22 A Id, 148 mOhm Rds(on), 45 nC Qg, TO-220-3 Full Pack (TO-220FP), Through Hole.

STMicroelectronics STF31N65M5
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Technical specifications

STF31N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs148mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds816 pF @ 100 V

Technical details

650 V N-channel in a full-pack — the BOM simplification angle

The STF31N65M5: It comes in the TO-220-3 Full Pack (TO-220FP) — the fully isolated package that eliminates the insulating washer and thermal compound between the tab and heatsink, saving a BOM line and assembly step in through-hole power stages.

Conduction and switching — what the parametric set tells you

The 45 nC total gate charge at 10 V is moderate for the 650 V / 22 A class, keeping gate-drive power manageable in hard-switching topologies up to the 100 kHz range. Input capacitance Ciss is 816 pF typical at 100 V drain bias — a moderate figure that, combined with the gate charge, gives a reasonable switching figure-of-merit (Rds(on) × Qg) for this voltage class. The maximum gate threshold voltage is 5 V at 250 µA drain current, so the 10 V drive level provides solid overdrive for minimum on-resistance.

It is ROHS3 compliant.

STF31N65M5
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