STF2HNK60Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH series, STF2HNK60Z, N-Channel MOSFET, 600 Vdss, 2 A Id, 4.8 Ohm Rds(on), 15 nC Qg, TO-220-3 Full Pack, -55 to 150 °C.

STMicroelectronics STF2HNK60Z
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Technical specifications

STF2HNK60Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.8Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds280 pF @ 25 V

Technical details

600 V SuperMESH N-channel in an isolated full-pack

At 1 A the conduction loss is 4.8 W, which consumes nearly a quarter of the 20 W package dissipation limit. The specified drive voltage of 10 V means a standard 12 V gate-drive rail fully enhances the channel; a 5 V logic-level output will not saturate the device and will leave it operating in the linear region with higher losses. Total gate charge is 15 nC at 10 V, a light load for the gate driver.

The TO-220FP's full-plastic construction has a higher junction-to-case thermal resistance than a standard TO-220 with a metal tab, so the effective power handling is lower than the package outline suggests.

STF2HNK60Z
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