STF28N65M2

STMicroelectronics

STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V drain-source, 20 A continuous drain, 180 mOhm Rds(on) at 10 V, 35 nC gate charge, TO-220-3 Full Pack through-hole package, 150°C junction temperature.

STMicroelectronics STF28N65M2
Download datasheet (PDF)
[IN STOCK] In Stock: 3 pcs
$4.87/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STF28N65M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1440 pF @ 100 V

Technical details

650 V, 20 A N-channel in a full-pak TO-220

The STF28N65M2: Gate charge is 35 nC at 10 V. The TO-220FP full-pak package provides full isolation from the heatsink — no insulating pad or washer needed, which simplifies assembly and reduces BOM count. The trade-off is a maximum power dissipation of 30 W at case temperature, roughly half what a standard TO-220 with the same die can dissipate.

Active product — no LTB risk

No last-time-buy or end-of-life notice has been issued for this part.

Rds(on) is 180 mΩ at 10 V gate drive. Package dissipation is 30 W.

STF28N65M2
[ALLOC] verified
Quote