STF24NM60N

STMicroelectronics

STMicroelectronics MDmesh™ II series, STF24NM60N, N-Channel MOSFET, 600 V Vdss, 17 A Id, 190 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, -55°C to 150°C.

STMicroelectronics STF24NM60N
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[IN STOCK] In Stock: 41 pcs
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Technical specifications

STF24NM60N specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 50 V

Technical details

At 8 A drain current and 10 V gate drive, the 190 mOhm Rds(on) max produces 12.2 W conduction loss — well within the 30 W package dissipation limit at Tc=25°C, but the TO-220FP's thermal resistance means the case will run hot in still air. The 46 nC total gate charge at 10 V is moderate; a typical gate driver delivering 1 A can switch the FET in under 50 ns, keeping crossover losses manageable in hard-switched topologies up to 100 kHz.

TO-220 Full Pack: no insulating washer needed

The through-hole mounting suits point-of-load boards and repair replacements where a soldered joint is preferred over a press-fit clip.

STF24NM60N
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