STF24N60M6

STMicroelectronics · MDmesh™ M6 Series

STMicroelectronics MDmesh™ M6 series, STF24N60M6, N-Channel MOSFET, 600V Vdss, 17A Id, 190mOhm Rds(on), 23nC Qg, TO-220FP through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STF24N60M6
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Technical specifications

STF24N60M6 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tj)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds960 pF @ 100 V

Technical details

600 V N-channel in an isolated through-hole package

The STF24N60M6: It comes in a TO-220 Full Pack (TO-220FP) through-hole package, which means the back of the package is electrically isolated — no insulating pad or washer needed between the tab and the heatsink. That saves a step during assembly and eliminates one potential thermal interface failure point.

That's the number you plug into the conduction loss calculation at full load. The gate charge is 23 nC at 10 V — low enough that a standard gate-drive IC or a simple bootstrap driver can switch it without excessive crossover loss. Input capacitance is 960 pF at 100 V Vds, which keeps the Miller plateau short and the switching edges clean.

Thermal and temperature range — where it survives

Maximum power dissipation is 30 W at case temperature — the TO-220FP's full-plastic body limits heat extraction compared to a standard TO-220 with a metal tab, so the thermal design needs a good heatsink or forced airflow if the part runs near its current limit continuously.

Lifecycle status is active, and the part is ROHS3 compliant.

STF24N60M6
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