STF23NM50N

STMicroelectronics

STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 500 V Drain-to-Source Voltage, 17 A Continuous Drain Current, 190 mOhm On-Resistance @ 8.5 A, 10 V, Through-Hole TO-220-3 Full Pack (TO-220FP).

STMicroelectronics STF23NM50N
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Technical specifications

STF23NM50N specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1330 pF @ 50 V

Technical details

Gate drive and switching — what the numbers mean

The STF23NM50N: Gate charge is 45 nC maximum at 10 V drive. Input capacitance (Ciss) is 1330 pF at 50 V Vds.

Thermal and mounting — the isolated package advantage

Maximum power dissipation is 30 W at case temperature, with the junction rated to 150°C. The TO-220FP body is fully molded — no exposed metal tab — so the device can be mounted directly to a grounded heatsink without an insulating pad. This saves a part and a assembly step, but the plastic package has higher thermal resistance than a standard TO-220 with a metal tab; the thermal design should account for that. The through-hole leads suit wave-solder or hand-solder rework equally well.

The base product number is STF23, which covers the TO-220FP variant of the MDmesh II 500 V family.

STF23NM50N
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