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STMicroelectronics STF22NM60N — Discrete Semiconductors

STF22NM60N N-Channel MOSFET, 600 V, 16 A, MDmesh II

MPNSTF22NM60N
Active

STMicroelectronics STF22NM60N, MDmesh™ II series, N-Channel MOSFET, 600 V Vdss, 16 A Id, 220 mOhm Rds(on), TO-220-3 Full Pack, -55 to 150 °C.

$6.6000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF22NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs220mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 50 V

Product details

600 V N-channel in an isolated TO-220FP — what it handles

The STF22NM60N: The TO-220 Full Pack (TO-220FP) isolates the back tab electrically, so you mount it directly to a heatsink without an insulating pad — the thermal path runs through the epoxy, not a separate washer.

Conduction and switching — the numbers that drive the BOM

On-resistance is 220 mOhm maximum at 8 A drain current with 10 V gate drive — that is the conduction loss floor for a 600 V class device. The MDmesh II structure keeps the specific Rds(on) competitive for this voltage range. Total gate charge is 44 nC at 10 V, and input capacitance is 1300 pF at 50 V drain. Maximum power dissipation is 30 W at the case — the full-pack construction limits heat extraction compared to a standard TO-220, so the thermal design needs a low-Rth heatsink or forced air if the load approaches 16 A continuously.

ROHS3 compliant.

Frequently asked questions

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