STMicroelectronics · STripFET™ Series
STMicroelectronics STripFET N-Channel MOSFET, STF20NF20, 200 V drain-source, 18 A continuous drain at 25°C, 125 mOhm Rds(on) at 10 V, TO-220FP full-pack through-hole package, -55°C to 175°C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 940 pF @ 25 V |
At 18 A the conduction loss hits about 40 W, which the 30 W package dissipation limit cannot sustain continuously — this part is sized for pulsed or moderate-duty-cycle operation at full current, not a steady 18 A DC load.
