STF18N65M2

STMicroelectronics · MDmesh™ M2 Series

STMicroelectronics MDmesh™ M2 N-Channel MOSFET, STF18N65M2, 650V Vdss, 12A Id, 330mOhm Rds(on), TO-220-3 Full Pack, Tube.

STMicroelectronics STF18N65M2
Download datasheet (PDF)
[IN STOCK] In Stock: 30 pcs
$2.24/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STF18N65M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs330mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds770 pF @ 100 V

Technical details

650 V, 12 A N-channel in the full-pack TO-220FP

The STF18N65M2: Housed in the TO-220FP full-pack, the plastic body isolates the backside tab — no separate insulating pad or washer needed when mounting to a grounded heatsink, which simplifies assembly and eliminates one thermal interface.

Rds(on) at junction temperature, not 25 °C

At 125 °C junction temperature the Rds(on) roughly doubles from the 25 °C value — budget for 660 mOhm hot resistance when estimating conduction loss in a continuous-load application like a PFC boost stage or a flyback converter primary switch.

The part is RoHS3 compliant; no exemption-based restrictions on the bill of materials for EU-market equipment.

STF18N65M2
[ALLOC] verified
Quote