STMicroelectronics MDmesh DK5 series, STF16N90K5, N-Channel MOSFET, 900 V Vdss, 15 A Id, 330 mOhm Rds(on) at 10 V, 29.7 nC Qg, TO-220 Full Pack through-hole, -55°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DK5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 330mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1027 pF @ 100 V |
The 10 V drive level is the recommended rail for minimum on-resistance; the part also specifies a 5 V maximum gate threshold at 100 µA. Gate charge totals 29.7 nC at 10 V.
Input capacitance (Ciss) is 1027 pF at 100 V Vds, which combined with the 29.7 nC gate charge gives a predictable switching speed for a given gate resistor.
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Critical for gate drive design and ensuring proper turn-on in switching circuits.