STF15N65M5

STMicroelectronics · MDmesh™ V Series

STMicroelectronics MDmesh™ V, STF15N65M5, N-Channel MOSFET, 650 V drain-source, 11 A continuous, 340 mOhm Rds(on) at 10 V, 22 nC gate charge, TO-220FP through-hole package.

STMicroelectronics STF15N65M5
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Technical specifications

STF15N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs340mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds816 pF @ 100 V

Technical details

650 V N-channel in a fully isolated TO-220FP

The STF15N65M5: It comes in a TO-220FP full-pack through-hole package, which means the backside tab is fully isolated — no mica washer or insulating pad needed when bolting to a grounded heatsink.

Total gate charge is 22 nC at 10 V. Input capacitance is 816 pF at 100 V drain-source, a moderate figure that does not force a high-current pre-driver IC.

Package and thermal path for the rework bench

The TO-220FP full-pack body has no exposed metal tab — the junction-to-case thermal path runs through the moulded epoxy back. Maximum power dissipation is 30 W at case temperature, so the heatsink interface relies on full-face contact, not a point contact through a washer.

STF15N65M5
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