STF14N80K5

STMicroelectronics

STMicroelectronics MDmesh™ K5 series N-channel MOSFET, 800V drain-source voltage, 12A continuous drain current, 445mOhm on-resistance at 10V gate drive, TO-220-3 Full Pack through-hole package, -55°C to 150°C operating temperature.

STMicroelectronics STF14N80K5
Download datasheet (PDF)
[IN STOCK] In Stock: 4 pcs
$2.66/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STF14N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs445mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds620 pF @ 100 V

Technical details

800 V N-channel MOSFET for high-voltage power conversion

What the 800 V rating means for your design

An 800 V drain-source voltage rating gives you margin for universal-input AC-DC converters (85–265 VAC) where the rectified DC bus peaks near 375 V. The 800 V rating also covers flyback and forward converters with reflected voltage spikes, plus PFC boost stages operating from a 400 V DC bus. Gate charge is 22 nC at 10 V, which means the gate driver does not need to source heavy peak current for fast switching.

Temperature range and package suitability

The through-hole mounting suits point-of-load assemblies and prototype builds where rework access matters.

For dual-sourcing or a pin-compatible alternative within the same MDmesh K5 family, the STF14N80K5 shares the same TO-220FP footprint and 800 V / 12 A rating with other K5 series parts; parametric differences are in on-resistance and gate charge, so verify the specific Rds(on) and Qg against your switching loss budget.

STF14N80K5
[ALLOC] verified
Quote