STF13NM60N

STMicroelectronics · MDmesh™ II Series

STMicroelectronics STF13NM60N, MDmesh™ II N-Channel MOSFET, 600 V drain-source, 11 A continuous drain, 360 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole, -55°C to 150°C junction.

STMicroelectronics STF13NM60N
[IN STOCK] In Stock: 700 pcs
$1.13/ pc

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Technical specifications

STF13NM60N specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 50 V

Technical details

STF13NM60N
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