STMicroelectronics SuperMESH N-Channel MOSFET, 600 V Vdss, 10 A continuous drain, 640 mOhm Rds(on) at 10 V, 59 nC gate charge, TO-220 Full Pack through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 640mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 59 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1740 pF @ 25 V |
The STF12NK60Z is supplied in the TO-220 Full Pack (TO-220FP) — a fully moulded through-hole package with no exposed metal tab.
Input capacitance is 1740 pF at 25 V drain-source.
Maximum power dissipation is 35 W at case temperature, and the maximum junction temperature is 150 °C. The through-hole leads need a hole pattern on the PCB; no special footprint beyond the standard TO-220 three-hole layout.
It is ROHS3 compliant.
Maximum on-resistance is 640 mOhm at 5 A drain current and 10 V gate drive. This is the value at 25 °C junction — expect Rds(on) to increase with temperature per the normalised curve in the datasheet.
The STF12NK60Z is the fully isolated TO-220FP version of the same die. The STP12NK60Z uses a standard TO-220 with an exposed metal tab. Electrically the ratings are the same, but the package difference changes the thermal path and mounting — the STF variant bolts directly without an insulator, while the STP needs one if the heatsink is grounded.