STF11N60DM2

STMicroelectronics · MDmesh™ DM2 Series

STMicroelectronics STF11N60DM2, N-Channel MOSFET, 600 V Vdss, 10 A Id, 420 mOhm Rds(on), 16.5 nC Qg, TO-220FP full-pack, -55 to 150 °C junction.

STMicroelectronics STF11N60DM2
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Technical specifications

STF11N60DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs420mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs16.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds614 pF @ 100 V

Technical details

STF11N60DM2
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