STF10P6F6

STMicroelectronics

STMicroelectronics STF10P6F6, DeepGATE™, STripFET™ VI, P-Channel MOSFET, 60V Vdss, 10A Id, 160mOhm Rds(on) @ 10V, TO-220-3 Full Pack, Through Hole.

STMicroelectronics STF10P6F6
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Technical specifications

STF10P6F6 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VI
FET typeP-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation20W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 48 V

Technical details

The STF10P6F6 is a P-Channel power MOSFET from STMicroelectronics, built on the DeepGATE™ and STripFET™ VI process technology. The TO-220 Full Pack package has an isolated tab, which simplifies heatsink mounting without an insulating pad — useful in metal-enclosure designs where the heatsink is chassis-grounded.

The 60 V Vdss gives 20% margin on a 48 V bus and comfortable headroom on a 24 V rail. The 10 A continuous drain rating is at case temperature 25°C; derate with the thermal curve above that. Input capacitance of 340 pF at 48 V drain-source confirms the switching losses stay modest.

The STF10P6F6 is marked obsolete by STMicroelectronics. For new designs, a current-production P-channel MOSFET in the same voltage and current class should be selected — look at ST's STripFET F7 or similar series with comparable Rds(on) and gate charge. For existing BOM lines already using the STF10P6F6, the part can be sourced through independent distribution on a quoted-to-order basis.

STF10P6F6
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