STF10N62K3

STMicroelectronics

STMicroelectronics SuperMESH3™ N-Channel MOSFET, STF10N62K3, 620 V Vdss, 8.4 A continuous drain, 750 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STF10N62K3
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Technical specifications

STF10N62K3 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.4A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs750mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 50 V

Technical details

620 V N-channel in a TO-220FP — primary-side switch for offline supplies

Drive voltage is specified at 10 V for the rated Rds(on); the threshold voltage maximum of 4.5 V at 100 µA means a standard 12 V gate drive from a PWM controller or driver IC will fully enhance the channel. The ±30 V maximum gate-source rating provides margin against ringing on the gate node in layouts with long traces.

Package and mounting — TO-220FP, no isolation hardware required

The TO-220 Full Pack (TO-220FP) is a fully molded through-hole package with the metal tab encapsulated in epoxy. Maximum power dissipation is 30 W at case temperature, which sets the heatsink sizing requirement for continuous operation.

Lifecycle — active, no end-of-life concern

For new designs, the active lifecycle removes the risk of a mid-production EOL notice on this specific order code.

STF10N62K3
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