STF10N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics STF10N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 7.5 A continuous drain, 600 mOhm max Rds(on) at 10 V, TO-220FP through-hole package, -55 to 150 °C operating temperature.

STMicroelectronics STF10N60M2
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Technical specifications

STF10N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.5A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs13.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 100 V

Technical details

STF10N60M2
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