STF10LN80K5

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh™ STF10LN80K5, N-channel 800 V 8 A MOSFET, 630 mOhm Rds(on) at 10 V gate drive, 15 nC gate charge, TO-220 Full Pack, -55 to 150 °C.

STMicroelectronics STF10LN80K5
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[IN STOCK] In Stock: 5 pcs
$13.23/ pc

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Technical specifications

STF10LN80K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs630mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds427 pF @ 100 V

Technical details

Gate drive and switching — light load on the driver

Total gate charge is 15 nC at 10 V, so a modest gate driver can switch it at tens of kilohertz without excessive drive current. Input capacitance is 427 pF at 100 V drain-source, which keeps the switching node capacitance low enough for clean waveforms in a 65–100 kHz offline converter.

Package advantage — no insulator needed

The TO-220 Full Pack (TO-220FP) has a fully moulded tab — no exposed metal drain pad. The through-hole mounting suits point-to-point wiring and prototype builds where rework is expected.

Temperature grade and thermal budget

ST lists the STF10LN80K5 as Active. ROHS3 compliant, so it fits current European and global assembly requirements without exemption paperwork.

STF10LN80K5
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