STE53NC50

STMicroelectronics · PowerMESH™ II Series

MOSFET N-CH 500V 53A ISOTOP

STMicroelectronics STE53NC50
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Technical specifications

STE53NC50 specifications
Parameter / AttributeSpecification / Value
SeriesPowerMESH™ II
FET typeN-Channel
MountingChassis Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C53A (Tc)
Power dissipation460W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseISOTOP
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 27A, 10V
Gate charge (Qg) (Max) @ vgs434 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11200 pF @ 25 V
STE53NC50
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