STE145N65M5

STMicroelectronics · MDmesh™ V Series

STMicroelectronics MDmesh™ V N-Channel MOSFET, STE145N65M5, 650 V Vdss, 143 A Id, 15 mOhm Rds(on) at 10 V, 414 nC Qg, ISOTOP chassis-mount package.

STMicroelectronics STE145N65M5
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[IN STOCK] In Stock: 22 pcs
$39.58/ pc

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Technical specifications

STE145N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingChassis Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C143A (Tc)
Power dissipation679W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseISOTOP
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 69A, 10V
Gate charge (Qg) (Max) @ vgs414 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds18500 pF @ 100 V

Technical details

Bolting it down — ISOTOP chassis-mount reality

The STE145N65M5: The mounting method is chassis mount, not PCB solder; the buyer and layout engineer need to plan for a thermal interface material and a screw-torque spec, not a reflow profile.

650 V, 143 A, 15 mOhm — what the headline ratings mean for the power stage

The 15 mOhm maximum on-resistance at Vgs = 10 V and 69 A is the conduction-loss floor; at full current the dissipation in the die alone, before switching losses, is over 300 W, which is why the 679 W power dissipation rating at the case and the ISOTOP's thermal path to a heatsink are non-negotiable.

Gate charge — sizing the driver

The 414 nC total gate charge at Vgs = 10 V sets the gate-driver current requirement. At a 50 kHz switching frequency, the average gate-drive current is 414 nC × 50 kHz = 20.7 mA; at 100 kHz it doubles to 41.4 mA. The peak current capability of the driver must also handle the charging of the 18500 pF input capacitance at the switching edge — a standard 2 A or 4 A gate-driver IC is adequate, but a weak logic-output driver will stretch the switching times and increase cross-conduction losses.

STE145N65M5
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